All Transistors. 2SC480 Datasheet

 

2SC480 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC480
   SMD Transistor Code: ER
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.65 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5

 2SC480 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC480 Datasheet (PDF)

 0.1. Size:40K  panasonic
2sc4809 e.pdf

2SC480 2SC480

Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi

 0.2. Size:40K  panasonic
2sc4805 e.pdf

2SC480 2SC480

Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.

 0.3. Size:36K  panasonic
2sc4805.pdf

2SC480 2SC480

Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.

 0.4. Size:41K  panasonic
2sc4808 e.pdf

2SC480 2SC480

Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat

 0.5. Size:36K  panasonic
2sc4809.pdf

2SC480 2SC480

Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi

 0.6. Size:37K  panasonic
2sc4808.pdf

2SC480 2SC480

Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat

 0.7. Size:46K  hitachi
2sc4807.pdf

2SC480 2SC480

2SC4807Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 4.4 GHz Typ High output power1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4807Absolute Maximum Ratings (Ta = 25C)Item Symbol Rati

 0.8. Size:143K  jmnic
2sc4804.pdf

2SC480 2SC480

JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta

 0.9. Size:951K  kexin
2sc4807.pdf

2SC480 2SC480

SMD Type TransistorsNPN Transistors2SC4807SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE

 0.10. Size:185K  inchange semiconductor
2sc4807.pdf

2SC480 2SC480

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4807DESCRIPTIONHigh Gain-Bandwidth Productf = 4.4 GHz TYP.THigh Output Power1 dB Power compression point P = 24 dBm TYP.cp@ V = 5V , I = 100 mA , f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF ~ UHF wide

 0.11. Size:191K  inchange semiconductor
2sc4806.pdf

2SC480 2SC480

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4806DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su

 0.12. Size:114K  inchange semiconductor
2sc4804.pdf

2SC480 2SC480

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute m

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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