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2SC483 Specs and Replacement

Type Designator: 2SC483

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 12 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO66

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2SC483 datasheet

 0.1. Size:466K  toshiba

2sc4839.pdf pdf_icon

2SC483

2SC4839 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4839 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C... See More ⇒

 0.2. Size:110K  sanyo

2sc4836.pdf pdf_icon

2SC483

Ordering number EN4134 NPN Epitaxial Planar Silicon Transistor 2SC4836 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SC4836] 4.5 Large allowable collector dissipation. 1.9 2.6 10.5 1.2 1.4 Low saturation voltage. Large current capacity. Fast switching speed. Usa... See More ⇒

 0.3. Size:149K  sanyo

2sc4837.pdf pdf_icon

2SC483

Ordering number EN4135 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SA1855/2SC4837] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Wide ASO and large current capacity... See More ⇒

Detailed specifications: 2SC480 , 2SC4806 , 2SC481 , 2SC482 , 2SC4828 , 2SC482G , 2SC482O , 2SC482Y , S9013 , 2SC4830 , 2SC484 , 2SC484B , 2SC484R , 2SC484Y , 2SC485 , 2SC485B , 2SC485R .

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