2SC487 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC487
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO66
2SC487 Transistor Equivalent Substitute - Cross-Reference Search
2SC487 Datasheet (PDF)
2sc4871.pdf
Ordering number:EN4857NPN Epitaxial Planar Silicon Transistor2SC4871UHF to S Band Low-Noise Amplifier,OSC ApplicationsFeatures Package Dimensions High cutoff frequency : fT=10GHz typ.unit:mm2 High gain : S21e =13dB typ (f=1GHz).2059B Low noise : NF=1.3dB typ (f=1GHz).[2SC4871] Small Cob : Cob=0.4pF typ.0.30.1530 to 0.11 20.3 0.60.65 0.6
2sc4877.pdf
2SC4877Silicon NPN Triple DiffusedApplicationTO3PFMTV / character display horizontal deflection outputFeatures High breakdown voltage1. BaseVCES = 1500 V 2. Collector3. Emitter Builtin damper diode type Isolated packageTO-3PFM123213Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit
2sc4878.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4878DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
