All Transistors. 2SC4880 Datasheet

 

2SC4880 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4880
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1700 V
   Maximum Collector-Emitter Voltage |Vce|: 900 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3PL

 2SC4880 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4880 Datasheet (PDF)

 ..1. Size:33K  hitachi
2sc4880.pdf

2SC4880
2SC4880

2SC4880Silicon NPN Triple DiffusedApplicationTV/character display horizontal deflection outputFeatures High speed switchingtf 0.5 s High breakdown voltageVCBO = 1700 VOutlineTO-3PL1. Base 2. Collector 3. Emitter1232SC4880Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 1700 VCollector to emitter vo

 ..2. Size:188K  inchange semiconductor
2sc4880.pdf

2SC4880
2SC4880

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4880DESCRIPTIONHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 8.2. Size:183K  toshiba
2sc4881.pdf

2SC4880
2SC4880

 8.3. Size:106K  sanyo
2sc4884.pdf

2SC4880
2SC4880

Ordering number:EN4136NPN Epitaxial Planar Silicon Transistor2SC4884High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High definition CRT display.unit:mm Especially suited for use in color TV chrome output2084Band high breakdown voltage driver applications.[2SC4884]4.51.9 2.610.51.2 1.4Features Adoption of MBIT process

 8.4. Size:82K  nec
2sc4885.pdf

2SC4880
2SC4880

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4885NPN SILICON EPITAXIAL TRANSISTOR3 PINS SUPER MINI MOLDPACKAGE DIMENSIONS(Units: mm)FEATURES Excellent Low NF in Low Frequency Band 2.10.1 Low Voltage Use1.250.1 Low Cob : 0.9 pF TYP. Low Noise Voltage : 90 mV TYP.2 Super Mini Mold Package. EIAJ : SC-7031ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)Colle

 8.5. Size:25K  sanken-ele
2sc4886.pdf

2SC4880

LAPT 2SC4886Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC4886 Symbol Conditions 2SC4886 UnitUnit 0.20.2 5.515.60.23.45VCBO 150 ICBO VCB=150V 100max AVVCEO 150 IEBO VEB=5V 100max AV

 8.6. Size:23K  sanken-ele
2sc4883.pdf

2SC4880

2SC4883/4883ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)Application : Audio Output Driver and TV Velocity-modulation(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsExternal Dimensions FM20(TO220F)Symbol 2SC4883 2SC4883AUnitSymbol Conditions 2SC4883 2SC4883A Unit0.24.20.210.1c0.52.8VCBO 150 180V 10max AI

 8.7. Size:113K  inchange semiconductor
2sc4883 2sc4883a.pdf

2SC4880
2SC4880

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4883 2SC4883A DESCRIPTION With TO-220F package Complement to type 2SA1859/1859A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

 8.8. Size:181K  inchange semiconductor
2sc4881.pdf

2SC4880
2SC4880

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4881DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Switching SpeedLow Collector Saturation Voltage-: V = 0.4V(Max)@ (I = 2.5A, I = 125mA)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

 8.9. Size:206K  inchange semiconductor
2sc4883a.pdf

2SC4880
2SC4880

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SA1859A100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)

 8.10. Size:196K  inchange semiconductor
2sc4886.pdf

2SC4880
2SC4880

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4886DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1860100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.11. Size:206K  inchange semiconductor
2sc4883.pdf

2SC4880
2SC4880

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4883DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOComplement to Type 2SA1859100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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