2SC49 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC49
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO5
2SC49 Transistor Equivalent Substitute - Cross-Reference Search
2SC49 Datasheet (PDF)
1.1. 2sc4938.pdf 
Size:41K _update
2SC4061K / 2SC3415S / 2SC4015 / 2DC3271F Transistors Transistors 2SC4938 / 2SC4129 (96-172-C52) (96-188-C55) 309
1.2. 2sc4944.pdf Size:217K _toshiba
2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4944 Audio Frequency General Purpose Amplefier Applications Unit: mm • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~400 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1873 Absolut
1.3. 2sc4935.pdf Size:176K _toshiba
1.4. 2sc4915.pdf Size:319K _toshiba
2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, If Amplifier Applications • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emit
1.5. 2sc4923.pdf Size:79K _sanyo
1.6. 2sc4976.pdf Size:31K _sanyo
Ordering number : ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO?200V(min). 2045B Large current capacitance. [2SA1875 / 2SC4976] Small reverse transfer capacitance and excellent high 6.5
1.7. 2sc4910.pdf Size:93K _sanyo
Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Condi
1.8. 2sc4984.pdf Size:48K _sanyo
Ordering number:ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions Low-frequency power amplifier applications. unit:mm Medium-speed switching. 2038A Small-sized motor drivers. [2SA1882/2SC4984] 4.5 1.5 1.6 Features Large current capacity. Low collector-to-emitter s
1.9. 2sc4983.pdf Size:144K _sanyo
Ordering number:4661 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1881/2SC4983 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers and LED drivers. 2018B [2SA1881/2SC4983] Features Large current capacity. Low collector-to-emitter saturation voltage. Very small-siz
1.10. 2sc4922.pdf Size:60K _sanyo
Ordering number:EN4768 NPN Epitaxial Planar Silicon Transistor 2SC4922 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=47k? , R2=47k? ). 2106A Very small-sized package permitting 2SC4922- [2SC4922] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0
1.11. 2sc4919.pdf Size:99K _sanyo
Ordering number:EN4765 NPN Epitaxial Planar Silicon Transistor 2SC4919 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SC4919- unit:mm applied sets to be made smaller and slimmer. 2106A Small output capacitance. [2SC4909] Low collector-to-emitter saturation voltage. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0.5 0.5
1.12. 2sc4909.pdf Size:61K _sanyo
Ordering number:EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=47k? , R2=47k? ). 2059B Very small-sized package permitting 2SC4909- [2SC4909] applied sets to be made smaller and slimmer. 0.3 0.15 Small ON resistance. 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65
1.13. 2sc4931.pdf Size:122K _sanyo
Ordering number:EN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2106A High cutoff frequency : fT=9.0GHz typ. [2SC4931] Very small-sized package permitting 2SC4931- 0.75 0.3 0.6 applied sets to be m
1.14. 2sc4920.pdf Size:60K _sanyo
Ordering number:EN4766 NPN Epitaxial Planar Silicon Transistor 2SC4920 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=4.7k? , R2=4.7k? ). 2106A Very small-sized package permitting 2SC4920- [2SC4920] applied sets to be made smaller and slimmer. 0.75 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1
1.15. 2sc4987.pdf Size:109K _sanyo
Ordering number:EN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit:mm Low collector saturation voltage. 2106A High gain-bandwidth product. [2SC4987] Small collector capacitance. 0.75 0.3 0.6 Very small-sized package permitting 2SC4987- applied sets to be made small and slim.
1.16. 2sc4924.pdf Size:78K _sanyo
1.17. 2sc4921.pdf Size:60K _sanyo
Ordering number:EN4767 NPN Epitaxial Planar Silicon Transistor 2SC4921 Muting Circuit, Driver Applications Features Package Dimensions High DC current gain. unit:mm On-chip bias resistance (R1=10k? , R2=10k? ). 2106A Very small-sized package permitting 2SC4921- [2SC4921] 0.75 applied sets to be made smaller and slimmer. 0.3 0.6 Small ON resistance. 0 to 0.1 0.2 0.1 0
1.18. 2sc4956.pdf Size:48K _nec
DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.20 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4956-T1 3 Kpcs/Reel. Emboss
1.19. 2sc4942.pdf Size:115K _nec
DATA SHEET SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm) voltage switching. This transistor is ideal for use in switching devices such as switching regulators and DC/DC converters. FEATURES New package with dimensions in between those of small
1.20. 2sc4955.pdf Size:44K _nec
DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance 2.80.2 Cre = 0.4 pF TYP. +0.1 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4955-T1 3 Kpcs/Reel. Embossed
1.21. 2sc4954.pdf Size:48K _nec
DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance 2.80.2 +0.1 Cre = 0.3 pF TYP. 1.5 0.65 0.15 ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 2SC4954-T1 3 Kpcs/Reel. Embo
1.22. 2sc4957.pdf Size:43K _nec
DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. 2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC4957-T1 3 Kpcs/Reel. Embosse
1.23. 2sc4959.pdf Size:53K _nec
DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.4 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2SC4959T1 3
1.24. 2sc4958.pdf Size:46K _nec
DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 0.1 Low Feedback Capacitance 1.25 0.1 Cre = 0.3 pF TYP. ORDERING INFORMATION 2 PART QUANTITY PACKING STYLE NUMBER 3 1 Embossed tape 8 mm wide. 2SC4958T1 3
1.25. 2sc4938.pdf Size:52K _rohm
2SC4938 Transistors High-voltage Switching Transistor (400V, 5A) 2SC4938 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ. 0.6V at IC / IB=5/1A) 13.1 3.2 2) Fast switching. (tf :Max.1s at IC=4A) 3) Wide SOA. (safe operating area) 8.8 (1) Base (2) Collector (3) Emitter ROHM : PSD3 0.5Min. EIAJ : SC-83A Absolute maximum ratings (Ta=25C) Parameter Symbol Limits U
1.26. 2sc4937.pdf Size:45K _rohm
1.27. 2sc4997.pdf Size:51K _rohm
2SC4997 / 2SC4998 Transistors High-frequency Amplifier Transistor, RF switching (10V, 0.1A) 2SC4997 / 2SC4998 Features External dimensions (Units : mm) 1) High transition frequency. (fT=240MHz) 2) High hFE. 2SC4997 (1) (2) (3) 0.8 Absolute maximum ratings (Ta=25C) 1.6 Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V 0.1Min. Collector-emitter voltage VCEO 10 V ( )
1.28. 2sc4985.pdf Size:40K _panasonic
Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.5 0.2 4.5 0.2 Features 90 High collector to base voltage VCBO 0.65 0.1 0.85 0.1 High collector to emitter VCEO Allowing automatic insertion with radial taping 1.0 0.1 0.8C 0.8C 0.7 0.1 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratin
1.29. 2sc4968.pdf Size:37K _panasonic
Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitter to base
1.30. 2sc4960.pdf Size:58K _panasonic
Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE ? 3.2 0.1 Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.0 0
1.31. 2sc4953.pdf Size:42K _panasonic
Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV 1.4 0.2 2
1.32. 2sc4968 e.pdf Size:41K _panasonic
Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCEO 10 V Emitter to base
1.33. 2sc4900.pdf Size:47K _hitachi
2SC4900 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4900 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V
1.34. 2sc4995.pdf Size:65K _hitachi
2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4995 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collect
1.35. 2sc4913.pdf Size:40K _hitachi
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (
1.36. 2sc4926.pdf Size:47K _hitachi
2SC4926 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4926 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V
1.37. 2sc4964.pdf Size:35K _hitachi
2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4964 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitt
1.38. 2sc4988.pdf Size:47K _hitachi
2SC4988 Silicon NPN Epitaxial ADE-208-004 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 8.5 GHz Typ High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4988 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit
1.39. 2sc4901.pdf Size:46K _hitachi
2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4901 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to em
1.40. 2sc4994.pdf Size:65K _hitachi
2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10.5 GHz Typ High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4994 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Colle
1.41. 2sc4965.pdf Size:14K _hitachi
2SC4965 Silicon NPN Epitaxial ADE-208-006 1st. Edition Application VHF / UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline 2SC4965 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V Collector current IC
1.42. 2sc4993.pdf Size:65K _hitachi
2SC4993 Silicon NPN Epitaxial ADE-208-011 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10.5 GHz Typ High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 2. Emitter 4 3. Base 4. Emitter 2SC4993 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collec
1.43. 2sc4928.pdf Size:20K _hitachi
2SC4928 Silicon NPN Triple Diffused Application TO3PL Character Display Horizontal Deflection Output Features High speed switching time: 0.5 s max High breakdown voltage, high current: VCBO = 1500 V, IC = 15 A Suitable for large size CRT Display 1 1. Base 2 2. Collector 3 3. Emitter Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit
1.44. 2sc4927.pdf Size:34K _hitachi
2SC4927 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features High breakdown voltage VCES = 1500 V Built-in damper diode type Isolated package TO-3PFM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC4927 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage VCES 150
1.45. 2sc4989.pdf Size:134K _mitsubishi
1.46. 2sc4916.pdf Size:100K _no
1.47. 2sc4940.pdf Size:148K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION ·With ITO-220 package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter volt
1.48. 2sc4980.pdf Size:148K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter
1.49. 2sc4941.pdf Size:58K _jmnic
Product Specification www.jmnic.com Silicon Power Transistors 2SC4941 DESCRIPTION ·With TO-3PML package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter v
1.50. 2sc4982.pdf Size:147K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter
1.51. 2sc4981.pdf Size:150K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter
1.52. 2sc4963.pdf Size:153K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter A
1.53. 2sc4907.pdf Size:25K _sanken-ele
2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCBO 600 V VCB=600V 1max mA IEBO VCEO
1.54. 2sc4908.pdf Size:24K _sanken-ele
2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) 2SC4908 Symbol Unit Symbol Conditions 2SC4908 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 900 V ICBO VCB=800V 100max A VCEO 800 VEB=7V 100ma
1.55. 2sc4940.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER C
1.56. 2sc4977.pdf Size:200K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4977 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are parti
1.57. 2sc4907.pdf Size:111K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4907 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PA
1.58. 2sc4923.pdf Size:136K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION ·With TO-3PML package ·High speed ·High reliability ·High breakdown voltage APPLICATIONS ·High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute ma
1.59. 2sc4980.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR
1.60. 2sc4916.pdf Size:137K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4916 DESCRIPTION ·With TO-3P(H)IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified ou
1.61. 2sc4941.pdf Size:120K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4941 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Switching power transistor Ў¤ High breakdown voltage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IB PT Tj Tstg TOR NDU ICO
1.62. 2sc4982.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR
1.63. 2sc4981.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR
1.64. 2sc4928.pdf Size:73K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4928 DESCRIPTION ·With TO-3PL package ·High speed switching ·High breakdown voltage,high current APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol
1.65. 2sc4960.pdf Size:260K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4960 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V
1.66. 2sc4924.pdf Size:232K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150
1.67. 2sc4908.pdf Size:109K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PA
1.68. 2sc4927.pdf Size:228K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=2
1.69. 2sc4963.pdf Size:43K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage Ў¤ High speed switching Ў¤ Built-in damper diode APPLICATIONS Ў¤ Color TV horizontal deflection output Ў¤ Color display horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and s
1.70. 2sc4944.pdf Size:845K _htsemi
2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features Small package (dual type) High voltage and high current High hFE, excellent hFE linearity 1 Complementary to 2SA1873 Marking: LY LGR MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V I
1.71. 2sc4984.pdf Size:181K _tysemi
SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SC4984 Features Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter
1.72. 2sc4976.pdf Size:1227K _kexin
SMD Type Transistors NPN Transistors 2SC4976 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High fT : fT=400MHz(typ). ● High breakdown voltage ● Large current capacitance. 0.127 +0.1 0.80-0.1 max ● Complementary to 2SA1875 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Rati
1.73. 2sc4984.pdf Size:1145K _kexin
SMD Type Transistors NPN Transistors 2SC4984 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=15V ● Complementary to 2SA1882 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 1
1.74. 2sc4983.pdf Size:1081K _kexin
SMD Type Transistors NPN Transistors 2SC4983 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complement to 2SA1881 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba
1.75. 2sc4942.pdf Size:977K _kexin
SMD Type Transistors NPN Transistors 2SC4942 1.70 0.1 ■ Features ● High voltage ● Fast switching speed 0.42 0.1 0.46 0.1 ● Complementary transistor with the 2SA1871 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 600 V Emitter - Base Voltage VEBO 7
1.76. 2sc4964.pdf Size:892K _kexin
SMD Type Transistors NPN Transistors 2SC4964 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect
1.77. 2sc4988.pdf Size:973K _kexin
SMD Type Transistors NPN Transistors 2SC4988 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.1A ● Collector Emitter Voltage VCEO=9V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO
1.78. 2sc4955.pdf Size:591K _kexin
SMD Type Transistors NPN Transistors 2SC4955 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector
1.79. 2sc4954.pdf Size:880K _kexin
SMD Type Transistors NPN Transistors 2SC4954 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=10mA 1 2 ● Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
