2SC494B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC494B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 260 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO3
2SC494B Transistor Equivalent Substitute - Cross-Reference Search
2SC494B Datasheet (PDF)
2sc4944.pdf
2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4944 Audio Frequency General Purpose Amplefier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1873 Absolut
2sc4942.pdf
DATA SHEETSILICON TRANSISTORS2SC4942NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm)voltage switching. This transistor is ideal for use in switchingdevices such as switching regulators and DC/DC converters.FEATURES New package with dimensions in between those of s
2sc4940.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter
2sc4941.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC4941 DESCRIPTION With TO-3PML package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbolAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emit
2sc4944.pdf
2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features Small package (dual type) High voltage and high current High hFE, excellent hFE linearity 1 Complementary to 2SA1873 Marking: LY LGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5
2sc4942.pdf
SMD Type TransistorsNPN Transistors2SC49421.70 0.1 Features High voltage Fast switching speed0.42 0.10.46 0.1 Complementary transistor with the 2SA18711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 600 V Emitter - Base Voltage VEBO 7
2sc4940.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1200 V VCEO
2sc4941.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4941DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsColor display horizontal deflection output
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
