2SC497R Specs and Replacement
Type Designator: 2SC497R
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO39
2SC497R Substitution
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2SC497R datasheet
2sc490 2sc491 2sc492 2sc493 2sc494 2sc495 2sc496 2sc497 2sc498 2sc499.pdf ![]()
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Ordering number ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz(typ). unit mm High breakdown voltage VCEO 200V(min). 2045B Large current capacitance. [2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle... See More ⇒
SMD Type Transistors NPN Transistors 2SC4976 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High fT fT=400MHz(typ). High breakdown voltage Large current capacitance. 0.127 +0.1 0.80-0.1 max Complementary to 2SA1875 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Rati... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4977 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are parti... See More ⇒
Detailed specifications: 2SC496, 2SC4962, 2SC4963, 2SC496O, 2SC496R, 2SC496Y, 2SC497, 2SC497O, 2N2222A, 2SC497Y, 2SC498, 2SC498O, 2SC498R, 2SC498Y, 2SC499, 2SC49M, 2SC49N
Keywords - 2SC497R pdf specs
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History: 2SC474 | FTC4083 | DTC501 | 2SC497O | MJ11033 | BC276B | BC275C
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