2SC49M Datasheet, Equivalent, Cross Reference Search

2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emit

2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4944 Audio Frequency General Purpose Amplefier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1873 Absolut

Ordering number:EN4411NPN Epitaxial Planar Silicon Transistor2SC4910VHF-Band Power Amplifier ApplicationsFeatures Package Dimensions On-chip emitter ballast resistors.unit:mm2084B[2SC4910]4.51.9 2.610.51.2 1.41.20.51.60.51 2 31 : Emitter2 : Collector3 : Base2.5 2.5 SANYO : FLPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

Ordering number:EN4766NPN Epitaxial Planar Silicon Transistor2SC4920Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=4.7k , R2=4.7k ).2106A Very small-sized package permitting 2SC4920-[2SC4920]applied sets to be made smaller and slimmer.0.750.30.6 Small ON resistance.0 to 0.1

Ordering number:ENN4633APNP/NPN Epitaxial Planar Silicon Transistors2SA1882/2SC4984Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplcations Package Dimensions Low-frequency power amplifier applications.unit:mm Medium-speed switching.2038A Small-sized motor drivers.[2SA1882/2SC4984]4.51.51.6Features Large current capacity. Low collector-to-e

Ordering number:EN4723NPN Epitaxial Planar Silicon Transistor2SC4987High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2106A High gain-bandwidth product.[2SC4987] Small collector capacitance. 0.750.30.6 Very small-sized package permitting 2SC4987-applied sets to be made small and

Ordering number:4661PNP/NPN Epitaxial Planar Silicon Transistor2SA1881/2SC4983Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers and LED drivers.2018B[2SA1881/2SC4983]Features Large current capacity. Low collector-to-emitter saturation voltage. Very sm

Ordering number:EN4767NPN Epitaxial Planar Silicon Transistor2SC4921Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=10k , R2=10k ).2106A Very small-sized package permitting 2SC4921-[2SC4921]0.75applied sets to be made smaller and slimmer.0.30.6 Small ON resistance.0 to 0.1

Ordering number:EN4768NPN Epitaxial Planar Silicon Transistor2SC4922Muting Circuit, Driver ApplicationsFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=47k , R2=47k ).2106A Very small-sized package permitting 2SC4922-[2SC4922]0.75applied sets to be made smaller and slimmer.0.30.6 Small ON resistance.0 to 0.1

Ordering number:EN4410NPN Epitaxial Planar Silicon Transistor2SC4909Muting Circuits, DriversFeatures Package Dimensions High DC current gain.unit:mm On-chip bias resistance (R1=47k , R2=47k ).2059B Very small-sized package permitting 2SC4909-[2SC4909]applied sets to be made smaller and slimmer.0.30.15 Small ON resistance.30 to 0.11 20.3 0.6

Ordering number:EN5295ANPN Epitaxial Planar Silicon Transistor2SC4931VHF to UHF Wide-BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2106A High cutoff frequency : fT=9.0GHz typ.[2SC4931] Very small-sized package permitting 2SC4931- 0.750.30.6applied s

Ordering number:EN4765NPN Epitaxial Planar Silicon Transistor2SC4919Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SC4919-unit:mmapplied sets to be made smaller and slimmer.2106A Small output capacitance.[2SC4909] Low collector-to-emitter saturation voltage. 0.750.30.6 Small ON resistance.0 to 0.10.20.1

Ordering number : ENN5507B2SA1875 / 2SC4976PNP / NPN Epitaxial Planar Silicon Transistors2SA1875 / 2SC4976High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO200V(min). 2045B Large current capacitance.[2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle

DATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.3 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4957-T1 3 Kpcs/

DATA SHEETSILICON TRANSISTORS2SC4942NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm)voltage switching. This transistor is ideal for use in switchingdevices such as switching regulators and DC/DC converters.FEATURES New package with dimensions in between those of s

DATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback Capacitance2.80.2 +0.1 Cre = 0.3 pF TYP.1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4954-T1 3 Kpc

DATA SHEETSILICON TRANSISTOR2SC4959HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.4 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2

DATA SHEETSILICON TRANSISTOR2SC4956HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation Low Feedback CapacitanceCre = 0.20 pF TYP.2.8 +0.2 0.3 1.5 +0.2 0.1 ORDERING INFORMATIONPARTQUANTITY PACKING STYLENUMBER2SC4956-T1 3 Kpcs

DATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURES Low Noise, High Gain PACKAGE DIMENSIONS Low Voltage Operation in millimeters Low Feedback Capacitance2.80.2 Cre = 0.4 pF TYP.+0.1 1.5 0.65 0.15 ORDERING INFORMATION2 PARTQUANTITY PACKING STYLENUMBER3 1 2SC4955-T1 3 Kpcs/Re

DATA SHEETSILICON TRANSISTOR2SC4958HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise, High Gainin millimeters Low Voltage Operation2.1 0.1 Low Feedback Capacitance1.25 0.1Cre = 0.3 pF TYP.ORDERING INFORMATION2PARTQUANTITY PACKING STYLENUMBER31Embossed tape 8 mm wide.2

2SC4061K / 2SC3415S / 2SC4015 / 2DC3271FTransistorsTransistors2SC4938 / 2SC4129(96-172-C52)(96-188-C55)309

2SC4997 / 2SC4998TransistorsHigh-frequency Amplifier Transistor,RF switching (10V, 0.1A)2SC4997 / 2SC4998 Features External dimensions (Units : mm)1) High transition frequency. (fT=240MHz)2) High hFE. 2SC4997(1)(2)(3)0.8 Absolute maximum ratings (Ta=25C)1.6Parameter Symbol Limits UnitCollector-base voltage VCBO 15 V0.1Min.Collector-emitter voltage VCEO 10 V

Power Transistors2SC4953Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEDielectric breakdown voltage of the package: > 5kV1.4

Transistor2SC4968Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V 1.27 1.27Collector to emitter voltage VCEO 10 VEmitte

Transistor2SC4968Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V 1.27 1.27Collector to emitter voltage VCEO 10 VEmitte

Power Transistors2SC4960, 2SC4960ASilicon NPN triple diffusion planar typeFor power switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw

Power Transistors2SC4985Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm7.5 0.2 4.5 0.2Features90High collector to base voltage VCBO0.65 0.1 0.85 0.1High collector to emitter VCEOAllowing automatic insertion with radial taping1.0 0.10.8C 0.8C0.7 0.1 0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter

2SC4993Silicon NPN EpitaxialADE-208-0111st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10.5 GHz Typ High gain, low noise figurePG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector2. Emitter43. Base4. Emitter2SC4993Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

2SC4964Silicon NPN EpitaxialADE-208-0051st. EditionApplicationVHF / UHF RF switchFeatures Low Ron and high performance for RF switch. Capable of high density mounting.OutlineMPAK311. Emitter2. Base23. Collector2SC4964Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8

2SC4994Silicon NPN EpitaxialADE-208-0121st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10.5 GHz Typ High gain, low noise figurePG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC4994Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings U

2SC4926Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4926Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage V

2SC4927Silicon NPN Triple DiffusedApplicationTV/character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V Built-in damper diode type Isolated packageTO-3PFMOutlineTO-3PFM211. Base ID2. Collector 3. Emitter13232SC4927Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltag

2SC4928Silicon NPN Triple DiffusedApplicationTO3PLCharacter Display Horizontal Deflection OutputFeatures High speed switching time: 0.5 s max High breakdown voltage, high current:VCBO = 1500 V, IC = 15 A Suitable for large size CRT Display11. Base22. Collector33. EmitterAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating Unit

2SC4988Silicon NPN EpitaxialADE-208-0041st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 8.5 GHz Typ High gain, low noise figurePG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHzOutlineUPAK1234 1. Base2. Collector3. Emitter4. Collector (Flange)2SC4988Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratin

2SC4901Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz Typ High gain, low noise figurePG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC4901Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect

2SC4965Silicon NPN EpitaxialADE-208-0061st. EditionApplicationVHF / UHF RF switchFeatures Low Ron and high performance for RF switch. Capable of high density mounting.Outline2SC4965Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8 VEmitter to base voltage VEBO 3 VCollector cu

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC4900Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz Typ High gain, low noise figurePG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4900Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VC

2SC4995Silicon NPN EpitaxialADE-208-0131st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz Typ High gain, low noise figurePG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC4995Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Uni

JMnic Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter

JMnic Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

Product Specification www.jmnic.com Silicon Power Transistors 2SC4941 DESCRIPTION With TO-3PML package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbolAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emit

JMnic Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION With TO-3PFM package High breakdown voltage High speed switching Built-in damper diode APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 Emitter

JMnic Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

2SC4908Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)2SC4908Symbol Unit Symbol Conditions 2SC4908 Unit0.24.20.210.1c0.52.8VCBO 900V ICBO VCB=800V 100max AVCEO 800 VEB=

2SC4907Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4907 Unit Symbol Conditions 2SC4907 Unit0.24.20.210.1c0.52.8ICBOVCBO 600 V VCB=600V 1max mAIEB

2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features Small package (dual type) High voltage and high current High hFE, excellent hFE linearity 1 Complementary to 2SA1873 Marking: LY LGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SC4984FeaturesLarge current capacity.Low collector-to-emitter saturation voltage.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 15 VEmitter

SMD Type TransistorsNPN Transistors2SC4964SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=8V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

SMD Type TransistorsNPN Transistors2SC4984SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=15V Complementary to 2SA18820.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 1

SMD Type TransistorsNPN Transistors2SC49421.70 0.1 Features High voltage Fast switching speed0.42 0.10.46 0.1 Complementary transistor with the 2SA18711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 600 V Emitter - Base Voltage VEBO 7

SMD Type TransistorsNPN Transistors2SC4983SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complement to 2SA1881+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

SMD Type TransistorsNPN Transistors2SC4976TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High fT : fT=400MHz(typ). High breakdown voltage Large current capacitance. 0.127+0.10.80-0.1max Complementary to 2SA1875+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Rati

SMD Type TransistorsNPN Transistors2SC4988SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=9V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SC4954SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

SMD Type TransistorsNPN Transistors2SC4955SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

2SC4901NPN2SC4901 NPN SOT-323 VHFUHFCATV :S21e2 13.5d

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4916DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay &

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4953DESCRIPTIONSilicon NPN triple diffusion planar typeHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high breakdown voltage highspeed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4927DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)CESBuilt-in damper diode typeIsolated package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV/character display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4980DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector Current-I = 5A(Max.)CLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC convert

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4928DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for character display horizontal deflection outputapplications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4924 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 1500V(Min) High Switching Speed High Reliability APPLICATIONS Very high-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltag

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4923 DESCRIPTION With TO-3PML package High speed High reliability High breakdown voltage APPLICATIONS High-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION With TO-220F package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1200 V VCEO

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4988DESCRIPTIONHigh Gain Bandwidth Productf = 8.5 GHz TYP.THigh Gain, Low Noise FigurePG = 10.5 dB TYP. , NF = 1.3 dB TYP. @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF ~ UHF wide band amplifier.ABSOLU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4907DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 500V(Min.)(BR)CEOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4982DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector Current-I = 10A(Max.)CLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC conver

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4941DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsColor display horizontal deflection output

isc Silicon NPN RF Transistor 2SC4901DESCRIPTION High gain bandwidth productfT = 9 GHz (Typ) @ VCE=5VIC=20mAf=0.9GHz High gain, low noise figureS 2 = 13.5 dB @ VCE=5VIC=20mAf=0.9GHz,21eNF = 1.6dB( Typ ) @ VCE=5VIC=5mA f=0.9GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUHF / VHF wide band ampl

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4963DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt in damper diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4960DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 900V(Min)(BR)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4901YKDESCRIPTIONHigh gain bandwidth productfT = 9 GHz (Typ) @ VCE=5VIC=20mAf=0.9GHzHigh gain, low noise figureS 2 = 13.5 dB @ VCE=5VIC=20mAf=0.9GHz,21eNF = 1.6dB( Typ ) @ VCE=5VIC=5mA f=0.9GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4977 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are parti

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4981DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC convertersand actuators.ABSOLUTE MAXIMUM