All Transistors. 2SC5024Y Datasheet

 

2SC5024Y Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5024Y

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 Β°C

Transition Frequency (ft): 18 MHz

Collector Capacitance (Cc): 120 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO218

2SC5024Y Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5024Y Datasheet (PDF)

4.1. 2sc5027af.pdf Size:236K _update

2SC5024Y
2SC5024Y

ο»ΏRoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2

4.2. 2sc5027a.pdf Size:236K _update

2SC5024Y
2SC5024Y

ο»ΏRoHS 2SC5027 Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 3A/ 800V / 50W FEATURES High-speed switching High breakdown voltage and high reliability C Wide SOA (Safe Operation Area) TO-220 package which can be installed to the heat sink with one screw B B C APPLICATIONS C E E Switching regulator and general purpose TO-2

4.3. 2sc5028.pdf Size:218K _toshiba

2SC5024Y
2SC5024Y

4.4. 2sc5027.pdf Size:241K _toshiba

2SC5024Y
2SC5024Y

4.5. 2sc5029.pdf Size:212K _toshiba

2SC5024Y
2SC5024Y

4.6. 2sc5022.pdf Size:41K _renesas

2SC5024Y
2SC5024Y

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.7. 2sc5026.pdf Size:37K _panasonic

2SC5024Y
2SC5024Y

Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SA1890 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga-

4.8. 2sc5026 e.pdf Size:41K _panasonic

2SC5024Y
2SC5024Y

Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SA1890 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga-

4.9. 2sc5027e.pdf Size:198K _utc

2SC5024Y
2SC5024Y

UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube 2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube 2SC5027EL-x-T

4.10. 2sc5027.pdf Size:49K _utc

2SC5024Y
2SC5024Y

UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220 * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-220

4.11. 2sc5025.pdf Size:11K _hitachi

2SC5024Y
2SC5024Y

2SC5025 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 30 V ——————————————

4.12. 2sc5023.pdf Size:11K _hitachi

2SC5024Y
2SC5024Y

2SC5023 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance 1 2 VCEO = 100 V, Cob = 4.5 pF typ 3 1. Emitter • Suitable for wide band video amplifier 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ———————————

4.13. 2sc5022.pdf Size:42K _hitachi

2SC5024Y
2SC5024Y

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.14. 2sc5026.pdf Size:890K _kexin

2SC5024Y
2SC5024Y

ο»ΏSMD Type Transistors NPN Transistors 2SC5026 1.70 0.1 β–  Features ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Complementary to 2SA1890 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter β–  Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V

Datasheet: 2SC5023O , 2SC5023R , 2SC5023Y , 2SC5024 , 2SC5024B , 2SC5024C , 2SC5024O , 2SC5024R , BC548B , 2SC5025 , 2SC5025O , 2SC5025R , 2SC5025Y , 2SC5026 , 2SC5026N , 2SC5026O , 2SC5026R .

 


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