2SC5026O Specs and Replacement
Type Designator: 2SC5026O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220
2SC5026O Substitution
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2SC5026O datasheet
Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ... See More ⇒
Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ... See More ⇒
SMD Type Transistors NPN Transistors 2SC5026 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA1890 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V... See More ⇒
Detailed specifications: 2SC5024R, 2SC5024Y, 2SC5025, 2SC5025O, 2SC5025R, 2SC5025Y, 2SC5026, 2SC5026N, D965, 2SC5026R, 2SC5027, 2SC5027N, 2SC5027O, 2SC5027R, 2SC5028, 2SC5028N, 2SC5028O
Keywords - 2SC5026O pdf specs
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History: BC857BW-G | 2SA1256E4 | XA122 | BC231Y | 2SC3083 | 2SD1176 | MJ11016
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