2SC5026R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5026R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
2SC5026R Transistor Equivalent Substitute - Cross-Reference Search
2SC5026R Datasheet (PDF)
2sc5026 e.pdf
Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the
2sc5026.pdf
Transistor2SC5026Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA18901.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the
2sc5026.pdf
SMD Type TransistorsNPN Transistors2SC50261.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SA18900.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
