2SC5030N Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5030N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO218
2SC5030N Transistor Equivalent Substitute - Cross-Reference Search
2SC5030N Datasheet (PDF)
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5036.pdf
Power Transistors2SC5036, 2SC5036ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
2sc5034.pdf
Power Transistors2SC5034Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High collector to emitter VCEOHigh-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.6 0.11.2 0.151.45 0.15 0.7 0.1Absol
2sc5032.pdf
Power Transistors2SC5032Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1Full-pack package with outstanding insulatio
2sc5037.pdf
Power Transistors2SC5037, 2SC5037ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
2sc5035.pdf
Power Transistors2SC5035Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures4.6 0.2High-speed switching9.9 0.3 2.9 0.2 3.2 0.1High collector to base voltage VCBOLow collector to emitter saturation voltage VCE(sat)Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
