2SC5030R PDF and Equivalents Search

 

2SC5030R Specs and Replacement

Type Designator: 2SC5030R

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1100 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO218

 2SC5030R Substitution

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2SC5030R datasheet

 7.1. Size:211K  toshiba

2sc5030.pdf pdf_icon

2SC5030R

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 8.2. Size:60K  panasonic

2sc5036.pdf pdf_icon

2SC5030R

Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, ... See More ⇒

 8.3. Size:59K  panasonic

2sc5034.pdf pdf_icon

2SC5030R

Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Absol... See More ⇒

Detailed specifications: 2SC5029, 2SC5029N, 2SC5029O, 2SC5029R, 2SC503, 2SC5030, 2SC5030N, 2SC5030O, MJE350, 2SC5031, 2SC5031N, 2SC5031O, 2SC5031R, 2SC5034, 2SC5035, 2SC5036, 2SC5039

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