2SC5031R Specs and Replacement
Type Designator: 2SC5031R
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO218
2SC5031R Substitution
- BJT ⓘ Cross-Reference Search
2SC5031R datasheet
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf 
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Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, ... See More ⇒
Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Absol... See More ⇒
Detailed specifications: 2SC503, 2SC5030, 2SC5030N, 2SC5030O, 2SC5030R, 2SC5031, 2SC5031N, 2SC5031O, B647, 2SC5034, 2SC5035, 2SC5036, 2SC5039, 2SC503D, 2SC503G, 2SC503O, 2SC503Y
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