2SC5035 Specs and Replacement
Type Designator: 2SC5035
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
2SC5035 Substitution
- BJT ⓘ Cross-Reference Search
2SC5035 datasheet
Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 4.6 0.2 High-speed switching 9.9 0.3 2.9 0.2 3.2 0.1 High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one ... See More ⇒
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf 
... See More ⇒
Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, ... See More ⇒
Detailed specifications: 2SC5030N, 2SC5030O, 2SC5030R, 2SC5031, 2SC5031N, 2SC5031O, 2SC5031R, 2SC5034, D667, 2SC5036, 2SC5039, 2SC503D, 2SC503G, 2SC503O, 2SC503Y, 2SC504, 2SC5047
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