2SC503G Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC503G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO39
2SC503G Transistor Equivalent Substitute - Cross-Reference Search
2SC503G Datasheet (PDF)
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5036.pdf
Power Transistors2SC5036, 2SC5036ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
2sc5034.pdf
Power Transistors2SC5034Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High collector to emitter VCEOHigh-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.6 0.11.2 0.151.45 0.15 0.7 0.1Absol
2sc5032.pdf
Power Transistors2SC5032Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1Full-pack package with outstanding insulatio
2sc5037.pdf
Power Transistors2SC5037, 2SC5037ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,
2sc5035.pdf
Power Transistors2SC5035Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures4.6 0.2High-speed switching9.9 0.3 2.9 0.2 3.2 0.1High collector to base voltage VCBOLow collector to emitter saturation voltage VCE(sat)Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one
Datasheet: 2SC5031N , 2SC5031O , 2SC5031R , 2SC5034 , 2SC5035 , 2SC5036 , 2SC5039 , 2SC503D , TIP41C , 2SC503O , 2SC503Y , 2SC504 , 2SC5047 , 2SC504G , 2SC504O , 2SC504Y , 2SC505 .
