2SC5047 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5047
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO218
2SC5047 Transistor Equivalent Substitute - Cross-Reference Search
2SC5047 Datasheet (PDF)
1.1. 2sc5047.pdf 
Size:108K _sanyo
Ordering number:EN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5047] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2
4.1. 2sc5048.pdf Size:209K _toshiba
4.2. 2sc5046.pdf Size:112K _sanyo
Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5046] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1
4.3. 2sc5045.pdf Size:108K _sanyo
Ordering number:EN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5045] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.
4.4. 2sc5041.pdf Size:101K _sanyo
Ordering number:EN4779 NPN Triple Diffused Planar Silicon Transistor 2SC5041 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5041] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8
4.5. 2sc5042.pdf Size:101K _sanyo
Ordering number:EN4780 NPN Triple Diffused Planar Silicon Transistor 2SC5042 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5042] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 :
4.6. 2sc5043.pdf Size:106K _sanyo
Ordering number:EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5043] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8
4.7. 2sc5044.pdf Size:105K _sanyo
Ordering number:EN4782A NPN Triple Diffused Planar Silicon Transistor 2SC5044 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5044] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 :
4.8. 2sc5049.pdf Size:24K _hitachi
2SC5049 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5049 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to em
4.9. 2sc5048.pdf Size:42K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5048 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Collector metal (fin) is fully covered with mold resin APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base
4.10. 2sc5042.pdf Size:41K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5042 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute
4.11. 2sc5048.pdf Size:153K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High speed Ў¤ High voltage Ў¤ Low saturation voltage APPLICATIONS Ў¤ Horizontal deflection output for high resolution display,colorTV Ў¤ High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5048 Absolute maximum ratings(Ta=25Ў
4.12. 2sc5042.pdf Size:164K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage, high reliability. Ў¤ High speed APPLICATIONS Ў¤ Ultrahigh-definition CRT display Ў¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5042 Fig.1 simplified outline (TO-3PML) and symbol Emitter Ab
4.13. 2sc5049.pdf Size:342K _kexin
SMD Type Transistors NPN Transistors 2SC5049 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect
Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .
