2SC5068A Datasheet, Equivalent, Cross Reference Search

2SC5068A Transistor Equivalent Substitute - Cross-Reference Search

2SC5068A Datasheet (PDF)

4.1. 2sc5066ft.pdf Size:125K _toshiba

2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

4.2. 2sc5066.pdf Size:466K _toshiba

2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

 4.3. 2sc5064.pdf Size:468K _toshiba

2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

4.4. 2sc5065.pdf Size:466K _toshiba

2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V B

 4.5. 2sc5069.pdf Size:106K _sanyo

Ordering number:EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions � High current capacity. unit:mm � Adoption of MBIT process. 2038A � High DC current gain. [2SC5069] � Low collector-to-emitter saturation voltage. 4.5 � High VEBO. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75

4.6. 2sc5060.pdf Size:52K _rohm

2SC5060 Transistors Power transistor (90�10V, 3A) 2SC5060 External dimensions (Units : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 2.5 6.8 3) Strong protection against reverse power surges due to �L� loads. 4) Darlington connection for high DC current gain. 0.65Max. 5) Built-in resistor between base and emitter. 0.5

4.7. 2sc5063.pdf Size:62K _panasonic

Power Transistors 2SC5063 Silicon NPN triple diffusion planar type Unit: mm 8.5� 0.2 3.4� 0.3 For high breakdown voltage high-speed switching 6.0� 0.5 1.0� 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8� 0.1 0.5max. Wide area of safe operation (ASO) 2.54� 0.3 N type package enabling direct soldering of the radiating fin to 5.08� 0.5 the pr

4.8. 2sc5069.pdf Size:1204K _kexin

SMD Type Transistors NPN Transistors 2SC5069 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

4.9. 2sc5064.pdf Size:1788K _kexin

SMD Type Transistors NPN Transistors 2SC5064 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

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