2SC507 Specs and Replacement
Type Designator: 2SC507
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 170 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO39
2SC507 Substitution
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2SC507 datasheet
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf ![]()
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Ordering number EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2... See More ⇒
Detailed specifications: 2SC5057 , 2SC5058 , 2SC505O , 2SC505R , 2SC506 , 2SC5068A , 2SC506O , 2SC506R , BD140 , 2SC507O , 2SC507R , 2SC507Y , 2SC508 , 2SC509 , 2SD1350A , 2SD1579K , 2SC509GTM .
Keywords - 2SC507 pdf specs
2SC507 cross reference
2SC507 equivalent finder
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