2SC51 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC51
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO30
2SC51 Transistor Equivalent Substitute - Cross-Reference Search
2SC51 Datasheet (PDF)
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
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2sc5171.pdf
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2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 180 VCollector-emitter voltage VCEO 180 VEmitter-base voltage VEBO
2sc5108ft.pdf
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2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction tempera
2sc5109.pdf
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2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 150 mWJunction temperature
2sc5198.pdf
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2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em
2sc5198r 2sc5198o.pdf
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2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em
2sc5111ft.pdf
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2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction tempera
2sc5111.pdf
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2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction temperature
2sc5110.pdf
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2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 100 mWJunction temperature
2sc5108.pdf
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2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature
2sc5107.pdf
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2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature
2sc5106.pdf
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2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 150 mWJunction temperature
2sc5155.pdf
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Ordering number:EN4802NPN Epitaxial Planar Silicon Transistor2SC5155Low-FrequencyGeneral-Purpose Amplifier, ApplicationsApplications Package Dimensions Various drivers. unit:mm2045BFeatures [2SC5155]6.5 High current capacity. 2.35.00.54 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.0.8
2sc5184.pdf
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DATA SHEETSILICON TRANSISTOR2SC5184NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.1 Super Mini-Mold package1.25 0.1 EIAJ: SC-70ORDERING INFORMAT
2sc5186.pdf
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DATA SHEETNPN SILICON RF TRANSISTOR2SC5186NPN EPITAXIAL SILICON RF TRANSISTORFOR LOW-NOISE MICROWAVE AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Low noiseNF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5186 50 pcs (N
2sc5177.pdf
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DATA SHEETSILICON TRANSISTOR2SC5177NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Current Consumption and High GainPACKAGE DIMENSIONS|S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.80.2 Mini-Mold package1.50.65+0.1 0.15EIAJ:
2sc5179.pdf
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DATA SHEETSILICON TRANSISTOR2SC5179NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.10.1 Small Mini-Mold package1.250.1EIAJ: SC-
2sc5194.pdf
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DATA SHEETSILICON TRANSISTOR2SC5194MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise2.10.2NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector CurrentIC = 100 mA 4-P
2sc5183.pdf
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DATA SHEETSILICON TRANSISTOR2SC5183NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLDPACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low Noise PACKAGE DIMENSIONS (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.8+0.2 0.3 4-pin Mini-Mold package1.5+0.2 0.1EIAJ: SC-61ORDERING
2sc5195.pdf
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DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise1.60.1NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz0.80.1NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz2 Large Absolute Maximum Collector CurrentIC = 100 mA S
2sc5185.pdf
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DATA SHEETSILICON TRANSISTOR2SC5185NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low Noise(Units: mm)NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHzNF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.1 0.2 Super Mini-Mold package1.25 0.1ORDERING INFORMATIONPARTQUANTITY ARRA
2sc5181.pdf
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DATA SHEETSILICON TRANSISTOR2SC5181NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm)|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz1.6 0.1 Ultra Super Mini-Mold package 0.8
2sc5192.pdf
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DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low NoiseNF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.22.8 0.3+0.2NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz1.5 0.1 Large Absolute Maximum Collect
2sc5178.pdf
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DATA SHEETSILICON TRANSISTOR2SC5178NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURES Low current consumption and high gainPACKAGE DIMENSIONS|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz(Units: mm)|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.8 +0.2 0.3 4-pin Mini-Mold package1.5 +
2sc5191.pdf
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DATA SHEETNPN SILICON RF TRANSISTOR2SC5191NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA
2sc5180.pdf
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DATA SHEET SILICON TRANSISTOR2SC5180NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low current consumption and high gain(Units : mm) S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHzS21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz2.1 0.2 Supper Mini-Mold package1.
2sc5182.pdf
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DATA SHEETSILICON TRANSISTOR2SC5182NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGEFOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS Low noise(Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz2.80.2 Mini-Mold package+0.1 1.5 0.65 0.15 EIAJ: SC-59ORDERING INFORMATIO
2sc5193.pdf
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DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORCOMPACT MINI MOLDFEATURESPACKAGE DRAWING(Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise2.10.1NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz1.250.1NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Coll
2sc5103.pdf
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2SC5103TransistorsHigh speed switching transistor (60V, 5A)2SC5103 External dimensions (Units : mm) Features1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)2) High speed switching (tf : Typ. 0.1 s at IC = 3A)5.5 1.53) Wide SOA. (safe operating area)0.94) Complements the 2SA1952.C0.50.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5(3) Emitt
2sc5147.pdf
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2SC5147TransistorsMedium Power Transistor(Chroma Output) (300V, 0.1A)2SC5147 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = 300V)2) Low collector output capacitance.10.0 4.5 (Typ.3pF at VCB = 30V)3.2 2.8 3) Wide SOA. (safe operating area)4) Ideal for color TV chroma output and amplification of1.21.3 video signals.0.80.752.54
2sc5161.pdf
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2SC5161TransistorsHigh-Voltage Switching Transistor(400V, 2A)2SC5161 External dimensions (Units : mm) Features1) Low VCE(sat).VCE(sat) = 0.15V (Typ.)2.3+0.26.50.2-0.1C0.5(Ic / IB =1A / 0.2A)5.1+0.20.50.1-0.12) High breakdown voltage.BVCEO = 400V3) Fast switching.0.650.10.75tf 1.0s (Ic = 0.8A)0.90.50.12.30.2 2.30.21.00.2 S
2sc5190 e.pdf
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Transistor2SC5190Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings
2sc5190.pdf
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Transistor2SC5190Silicon NPN epitaxial planer typeFor low-voltage high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings
2sc5104.pdf
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Power Transistors2SC5104Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features1.5max. 1.1max.High-speed switchingHigh collector to base voltage VCBO0.8 0.1 0.5max.Wide area of safe operation (ASO)2.54 0.3Satisfactory linearity of foward current transfer ratio hFE5.08 0.5N
2sc5128.pdf
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Power Transistors2SC5128Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink with one screw
2sc5127.pdf
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Power Transistors2SC5127, 2SC5127ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.
2sc5145.pdf
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Power Transistors2SC5145Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features High-speed switching High collector to base voltage VCBO1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circu
2sc5121.pdf
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Power Transistors2SC5121Silicon NPN triple diffusion planar typeFor general amplificationUnit: mm+0.58.0 0.1 3.2 0.2FeaturesHigh collector to base voltage VCBO 3.16 0.1High collector to emitter VCEOSmall collector output capacitance CobTO-126 package, which is fitted to a heat sink without any insu-lation partsAbsolute Maximum Ratings (TC=25C)0.5 0.1
2sc5132.pdf
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2SC5132ASilicon NPN Triple Diffused PlanarApplicationTO3PFM (N)Character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V, IC = 8 A Builtin damper diode type Isolated packageCTO-3PFMB1. Base2. Collector13. Emitter23EAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
2sc5136.pdf
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2SC5136Silicon NPN EpitaxialADE-208-2231st. EditionApplicationVHF/UHF wide band amplifierFeatures High gain bandwidth productfT = 3.8 GHz typ High gain, low noise figurePG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5136Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base v
2sc5140.pdf
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2SC5140Silicon NPN EpitaxialADE-208-227A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YH.Attention: This device is very sensitive to ele
2sc5138.pdf
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2SC5138Silicon NPN EpitaxialADE-208-225A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 6 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YL.Attention: This device is very sensitive to ele
2sc5141.pdf
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2SC5141Silicon NPN EpitaxialADE-208-228A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 5.8 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YN.Attention: This device is very sensitive to e
2sc5139.pdf
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2SC5139Silicon NPN EpitaxialADE-208-2261st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5139Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base
2sc5137.pdf
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2SC5137Silicon NPN EpitaxialADE-208-2241st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5137Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas
2sc5120.pdf
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2SC5120Silicon NPN EpitaxialApplicationTO126FMHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 500 MHz typ High voltage and low output capacitanceVCEO = 150 V, Cob = 5.0 pF typ Suitable for wide band video amplifier 1231. Emitter2. Collector3. BaseAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
2sc5100.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sc5124.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Display horizontal deflection output Switching regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBO
2sc5101.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sc5129.pdf
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Product Specification www.jmnic.com Silicon Power Transistors 2SC5129 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS)
2sc515.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC515 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA
2sc5130.pdf
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2SC5130Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit0.24.20.210.1c0.5VCBO 600 V ICBO VCB=500V 100max A2.8
2sc5100.pdf
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2SC5100Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)2SC5100 UnitSymbol 2SC5100 Unit Symbol Conditions0.20.2 5.515.60.23.4510max AVCBO 160 V ICBO VCB=160VVCEO 120 V VEB=6VIEBO 10max A
2sc5124.pdf
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2SC5124Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol 2SC5124 Unit Symbol Conditions 2SC5124 Unit0.20.2 5.515.6ICBO1 VCB=1200V A100m
2sc5101.pdf
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2SC5101Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit0.20.2 5.515.60.23.45VCBO 200 V ICBO VCB=200V 10max AVCEO 140 V IEBO VEB=6V 10max AV
2sc5198 2sa1941.pdf
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Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltageVCEO
2sc5171s.pdf
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2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features 2SA1930S(BR3CA1930SQ) High fT, complementary pair with 2SA1930S(BR3CA1930SQ). / Applications General power an
2sc5171i.pdf
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2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features 2SA1930I(BR3CA1930I) High fT, complementary pair with 2SA1930I(BR3CA1930I). / Applications General power and d
2sc5198b.pdf
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RoHS 2SC5198B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor10A/140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO =140V (min) 5.450.1 5.450.11.4Complementary to 2SA1941BB C ETO-3P package which can be installed to the heat
2sc5161.pdf
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SMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SC5161TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.8Features5.30-0.2 0.50-0.7Low VCE(sat).VCE(sat) = 0.15V (Typ.),IC / IB =1A/ 0.2AHigh breakdown voltage.VCEO =400V0.127+0.1 max0.80-0.1F
2sc5177.pdf
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SMD Type TransistorsNPN Transistors2SC5177SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=10mA1 2 Collector Emitter Voltage VCEO=3V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
2sc5109.pdf
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SMD Type TransistorsNPN Transistors2SC5109SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc5191.pdf
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SMD Type TransistorsNPN Transistors2SC5191SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=6V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector
2sc5106.pdf
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SMD Type TransistorsNPN Transistors2SC5106SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V +0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector
2sc5182.pdf
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SMD Type TransistorsNPN Transistors2SC5182SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=3V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect
2sc5147 3da5147.pdf
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2SC5147(3DA5147) NPN /SILICON NPN TRANSISTOR Purpose: Ideal for Color TV chroma output and amplification of video signals. : Features: High breakdown voltage,low collector output capacitance,wide SOA. /Absolute maxim
2sc5198.pdf
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2SC5198Silicon NPN transistorPower Amplifier Applications Complementary to 2SA1941 High collector voltage:VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to
2sc5198t7tl.pdf
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2SC5198T7TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sc5198r 2sc5198o.pdf
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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sc5197r 2sc5197o.pdf
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SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5197 DESCRIPTIONLow Collector Saturation Voltage-: VCE(sat)= 2.0V(Min) @IC= 6AGood Linearity of hFEComplement to Type 2SA1940APPLICATIONS Power amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME
2sc5198.pdf
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2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V
2sc5171.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5171DESCRIPTIONHigh Transition Frenquency : f =200MHz(Typ.)TComplementary to 2SA1930100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
2sc5130.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5130DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
2sc5150.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5150DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switchi
2sc5199.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5199DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOComplement to Type 2SA1942100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco
2sc5100.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5100DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1908100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM
2sc5124.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5124DESCRIPTIONSilicon NPN diffused planar transistorGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeABSOLUTE MAXIMUM RATINGS(T =2
2sc5148.pdf
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isc Silicon NPN Power Transistor 2SC5148DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TVHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25
2sc5198.pdf
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isc Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage appli
2sc5101.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5101DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1909100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM
2sc5103.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5103DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation VoltageComplement to Type 2SA1952Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc5129.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5129DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TV.High speed switch
2sc5174.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5174DESCRIPTIONSilicon NPN epitaxial typeLow Collector Saturation VoltageHigh transition frequencyComplementary to 2SA1932Good Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicatio
2sc5149.pdf
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isc Silicon NPN Power Transistor 2SC5149DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for medium resolution displaycolor TVHigh speed switching applicationsABSOLUT
2sc5143.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5143DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display&colo
2sc5128.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5128DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 500V(Min)(BR)CEOHigh Speed SwitchingFull-pack package with outstanding insulation,which can be in staled to the heat sink with one screw100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI
2sc5147.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5147DESCRIPTIONHigh breakdown voltage(BVceo=300V).Low collector output capacitance(Typ.3pF@Vce=30V).Wide SOA(safe operating area)Ideal for color TV chroma output and amplificationof video signals100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT
2sc5197.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5197DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1940100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidel
2sc5191.pdf
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INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5191DESCRIPTIONLow Voltage Operation ,Low Phase DistortionLow NoiseNF = 1.5 dB TYP. @V = 3 V, I = 7 mA, f = 2 GHzCE CNF = 1.7 dB TYP. @V = 1 V, I = 3 mA, f = 2 GHzCE CLarge Absolute Maximum Collector CurrentI = 100 mAC100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and re
2sc515.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC515DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in line-operated color TV chromaoutput circuits and sound output circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sc5196.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5196DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 5ACE(sat) CGood Linearity of hFEComplement to Type 2SA1939100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidel
2sc5144.pdf
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isc Silicon NPN Power Transistor 2SC5144DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1700V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1700 VCBO
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
![2SC51](https://alltransistors.com/images/us.png)
![2SC51](https://alltransistors.com/images/es.png)
![2SC51](https://alltransistors.com/images/ru.png)
LIST
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS