2SC510M Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC510M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
2SC510M Transistor Equivalent Substitute - Cross-Reference Search
2SC510M Datasheet (PDF)
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
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2sc5108ft.pdf
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2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction tempera
2sc5109.pdf
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2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 150 mWJunction temperature
2sc5108.pdf
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2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature
2sc5107.pdf
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2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature
2sc5106.pdf
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2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 150 mWJunction temperature
2sc5103.pdf
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2SC5103TransistorsHigh speed switching transistor (60V, 5A)2SC5103 External dimensions (Units : mm) Features1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)2) High speed switching (tf : Typ. 0.1 s at IC = 3A)5.5 1.53) Wide SOA. (safe operating area)0.94) Complements the 2SA1952.C0.50.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5(3) Emitt
2sc5104.pdf
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Power Transistors2SC5104Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features1.5max. 1.1max.High-speed switchingHigh collector to base voltage VCBO0.8 0.1 0.5max.Wide area of safe operation (ASO)2.54 0.3Satisfactory linearity of foward current transfer ratio hFE5.08 0.5N
2sc5100.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sc5101.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sc5100.pdf
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2SC5100Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)2SC5100 UnitSymbol 2SC5100 Unit Symbol Conditions0.20.2 5.515.60.23.4510max AVCBO 160 V ICBO VCB=160VVCEO 120 V VEB=6VIEBO 10max A
2sc5101.pdf
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2SC5101Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit0.20.2 5.515.60.23.45VCBO 200 V ICBO VCB=200V 10max AVCEO 140 V IEBO VEB=6V 10max AV
2sc5109.pdf
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SMD Type TransistorsNPN Transistors2SC5109SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc5106.pdf
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SMD Type TransistorsNPN Transistors2SC5106SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V +0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector
2sc5100.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5100DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1908100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM
2sc5101.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5101DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1909100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM
2sc5103.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5103DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation VoltageComplement to Type 2SA1952Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .