2SC512O Specs and Replacement

Type Designator: 2SC512O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO39

 2SC512O Substitution

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2SC512O datasheet

 8.1. Size:120K  1

2sc510 2sc512.pdf pdf_icon

2SC512O

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 8.2. Size:210K  toshiba

2sc5129.pdf pdf_icon

2SC512O

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 8.3. Size:171K  toshiba

2sc5122.pdf pdf_icon

2SC512O

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 8.4. Size:59K  panasonic

2sc5128.pdf pdf_icon

2SC512O

Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink with one screw ... See More ⇒

Detailed specifications: 2SC510M, 2SC510O, 2SC510R, 2SC511, 2SC511O, 2SC511R, 2SC512, 2SC5120, A940, 2SC512R, 2SC513, 2SC5130, 2SC5132A, 2SC513O, 2SC513R, 2SC514, 2SC515

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