2SC5207A Datasheet and Replacement

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC5200High power NPN epitaxial planar bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Typical fT = 30 MHzApplication Audio power amplifier321DescriptionTO-264This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity

2SC5200NBipolar Transistors Silicon NPN Triple-Diffused Type2SC5200N2SC5200N2SC5200N2SC5200N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 230 V (min)(2) Complementary to 2SA1943N(3) Recommended for 100-W high-fidelity audio frequency amplifier output

2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications High-speed switching: tr = 1.0 s (max) ,tf = 1.5 s (max) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collecto

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter

January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel

DATA SHEETwww.onsemi.comNPN Epitaxial SiliconTransistorFJL4315, 2SC52001. Base2. Collector3. EmitterFeatures1 High Current Capability: IC = 17 ATO-264-3LDCASE 340CA High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 VMARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tubeww

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

NPN Silicon NPN Triple Diffused Transistor R 2SC5200 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEOV =250V (min) V =250V (min) CEO CEO 2SA1943 Complementary to 2SA1943

RoHS 2SC5200BL Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor15A/230V/150W5.0020.000.2018.003.300.20TO-3PLFEATURESHigh breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL0.603.20TO-3PL package which can be installed to the 5.450.05 5.450.05heat sink with one screw1 2 3 APPLICATIONSSuit

SMD Type TransistorsNPN Transistors2SC52091.70 0.1 Features High hFE : hFE=600 to 1800 High breakdown voltage Small package for mounting0.42 0.10.46 0.1 Complementary to 2SA19441.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V E

Silicon NPN transistorFeatures: Power Amplifier Applications Complementary to 2SA1943 High collector voltage:VCEO=230V (min) Recommended for 100-W high-fidelity audio frequencyamplifier Output stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant change intemperature, etc.) may cause this produc

2SC5200T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER

2SC5200Minos High Power ProductsNPN TRANSISTORSFeatures:Power Amplifier ApplicationsComplementaryto 2SA1943Highcollector voltage:VCEO=230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis pro

SPTECH Product SpecificationINCHANGE Semiconductor isc Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifie

isc Silicon NPN Power Transistor 2SC5200NDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943NMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency am

isc Silicon NPN Power Transistor 2SC5200HDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicati

isc Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency ampl