All Transistors. 2SC535 Datasheet

 

2SC535 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC535

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 1.8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT33

2SC535 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC535 Datasheet (PDF)

1.1. 2sc5353.pdf Size:207K _toshiba

2SC535
2SC535



1.2. 2sc5352.pdf Size:188K _toshiba

2SC535
2SC535



 1.3. 2sc5351.pdf Size:191K _toshiba

2SC535
2SC535



1.4. 2sc5355.pdf Size:151K _toshiba

2SC535
2SC535

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs (max), t = 0.3 µs (max) f • High collector breakdown voltage: V = 400 V CEO • High DC current gain: h = 20 (min) FE Maximum Ratings (Ta = 25°C)

 1.5. 2sc5358.pdf Size:171K _toshiba

2SC535
2SC535



1.6. 2sc5359.pdf Size:121K _toshiba

2SC535
2SC535

2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V = 230 V CEO • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter volta

1.7. 2sc5356.pdf Size:175K _toshiba

2SC535
2SC535

2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (I = 1.2 A) C • High collectors breakdown voltage: V = 800 V CEO • High DC current gain: h = 15 (min) (I = 0.15 A) FE C Maximum Ra

1.8. 2sc5354.pdf Size:129K _toshiba

2SC535
2SC535



1.9. 2sc5353.pdf Size:271K _utc

2SC535
2SC535

UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX) * High collectors breakdown voltage: VCEO = 700V 1 TO-220F1

1.10. 2sc5353b.pdf Size:251K _utc

2SC535
2SC535

UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. 1 1 FEATURES TO-220F1 TO-251 * Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX) * High collectors breakdown voltage:

1.11. 2sc535.pdf Size:54K _hitachi

2SC535
2SC535

2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100

1.12. 2sc5358.pdf Size:128K _jmnic

2SC535
2SC535

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION · ·With TO-3P(I) package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3P(

1.13. 2sc5352.pdf Size:96K _inchange_semiconductor

2SC535
2SC535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

1.14. 2sc5358.pdf Size:158K _inchange_semiconductor

2SC535
2SC535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5358 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Complement to type 2SA1986 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and sy

1.15. 2sc5359.pdf Size:142K _inchange_semiconductor

2SC535
2SC535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 DESCRIPTION · ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL)

1.16. 2sc5354.pdf Size:263K _inchange_semiconductor

2SC535
2SC535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL

Datasheet: 2SC530 , 2SC530A , 2SC531 , 2SC531A , 2SC532 , 2SC533 , 2SC5333 , 2SC534 , BC557 , 2SC535P , 2SC536 , 2SC536KNP , 2SC536NP , 2SC536P , 2SC536SP , 2SC537 , 2SC5370O .

 
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