2SC547 Specs and Replacement
Type Designator: 2SC547
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO39
- BJT ⓘ Cross-Reference Search
2SC547 datasheet
0.1. Size:40K sanyo
2sc5476.pdf 

Ordering number EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC5476] Features 4.5 10.0 2.8 High DC current gain. 3.2 Large current capacity and wide ASO. Contains a Zener d... See More ⇒
0.2. Size:38K panasonic
2sc5472 e.pdf 

Transistor 2SC5472 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 High gain of 8.2dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. 2 S-Mini type package, allowing downsizing of the equipment and a... See More ⇒
0.3. Size:38K panasonic
2sc5473 e.pdf 

Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic... See More ⇒
0.4. Size:34K panasonic
2sc5473.pdf 

Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic... See More ⇒
0.5. Size:37K panasonic
2sc5474 e.pdf 

Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. SS-Mini type package, allowing downsizing of the equipment 2 and aut... See More ⇒
0.6. Size:35K panasonic
2sc5478.pdf 

Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.... See More ⇒
0.7. Size:52K panasonic
2sc5472.pdf 

Transistors 2SC5472 Silicon NPN epitaxial planer type Unit mm For low-voltage low-noise high-frequency oscillation 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT High gain of 8.2 dB and low noise of 1.8 dB at 3 V 1 2 Optimum for RF amplification of a portable telephone and pager (0.65) (0.65) S-mini type package, allowing downsizing of ... See More ⇒
0.8. Size:34K panasonic
2sc5474.pdf 

Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. SS-Mini type package, allowing downsizing of the equipment 2 and aut... See More ⇒
0.9. Size:42K hitachi
2sc5470.pdf 

2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec(typ.) at fH=64kHz Outline TO 3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector ... See More ⇒
0.10. Size:116K isahaya
2sc5477.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
0.11. Size:779K kexin
2sc5477.pdf 

SMD Type Transistors NPN Transistors 2SC5477 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect... See More ⇒
Detailed specifications: 2SC54, 2SC540, 2SC541, 2SC542, 2SC543, 2SC544, 2SC545, 2SC546, 2SD1047, 2SC547D, 2SC548, 2SC549, 2SC55, 2SC550, 2SC551, 2SC552, 2SC553
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