2SC551 Specs and Replacement
Type Designator: 2SC551
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO31
- BJT ⓘ Cross-Reference Search
2SC551 datasheet
0.1. Size:51K rohm
2sc5511.pdf 

2SC5511 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 Features External dimensions (Units mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. 1.2 1.3 ... See More ⇒
0.2. Size:35K panasonic
2sc5514.pdf 

Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.... See More ⇒
0.3. Size:35K panasonic
2sc5515.pdf 

Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.... See More ⇒
0.4. Size:47K panasonic
2sc5519.pdf 

Power Transistors 2SC5519 2SC5519 2SC5519 2SC5519 2SC5519 Silicon NPN triple diffusion mesa type Unit mm 15.5 0.5 3.0 0.3 For horizontal deflection output 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a 5 glass passivation layer 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.... See More ⇒
0.5. Size:35K panasonic
2sc5513.pdf 

Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.... See More ⇒
0.6. Size:35K panasonic
2sc5516.pdf 

Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.... See More ⇒
0.7. Size:35K panasonic
2sc5518.pdf 

Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.... See More ⇒
0.8. Size:35K panasonic
2sc5517.pdf 

Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.... See More ⇒
0.9. Size:187K inchange semiconductor
2sc5516.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5516 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
0.10. Size:179K inchange semiconductor
2sc5517.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5517 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Wide Area of Safe Operation Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications AB... See More ⇒
Detailed specifications: 2SC545, 2SC546, 2SC547, 2SC547D, 2SC548, 2SC549, 2SC55, 2SC550, 2SC4793, 2SC552, 2SC553, 2SC554, 2SC555, 2SC555D, 2SC556, 2SC557, 2SC557D
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