All Transistors. 2SC551 Datasheet

 

2SC551 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO31

 2SC551 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC551 Datasheet (PDF)

 0.1. Size:51K  rohm
2sc5511.pdf

2SC551

2SC5511TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(160V, 1.5A)2SC5511 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = 160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SA2005.1.21.3

 0.2. Size:35K  panasonic
2sc5514.pdf

2SC551 2SC551

Power Transistors2SC5514Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 0.3. Size:35K  panasonic
2sc5515.pdf

2SC551 2SC551

Power Transistors2SC5515Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 0.4. Size:47K  panasonic
2sc5519.pdf

2SC551 2SC551

Power Transistors2SC55192SC55192SC55192SC55192SC5519Silicon NPN triple diffusion mesa typeUnit: mm15.50.5 3.00.3For horizontal deflection output 3.20.155 Features High breakdown voltage, and high reliability through the use of a5glass passivation layer5 High-speed switching(4.0)52.00.2 Wide area of safe operation (ASO)1.

 0.5. Size:35K  panasonic
2sc5513.pdf

2SC551 2SC551

Power Transistors2SC5513Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 0.6. Size:35K  panasonic
2sc5516.pdf

2SC551 2SC551

Power Transistors2SC5516Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 0.7. Size:35K  panasonic
2sc5518.pdf

2SC551 2SC551

Power Transistors2SC5518Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 0.8. Size:35K  panasonic
2sc5517.pdf

2SC551 2SC551

Power Transistors2SC5517Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

 0.9. Size:187K  inchange semiconductor
2sc5516.pdf

2SC551 2SC551

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5516DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 0.10. Size:179K  inchange semiconductor
2sc5517.pdf

2SC551 2SC551

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5517DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedWide Area of Safe OperationBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsAB

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC5452 | 2SC55 | BDX88

 

 
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