All Transistors. 2SC560 Datasheet

 

2SC560 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC560

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO39

2SC560 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC560 Datasheet (PDF)

0.1. 2sc5607.pdf Size:30K _sanyo

2SC560
2SC560

Ordering number : ENN6403A2SC5607NPN Epitaxial Planar Silicon Transistor2SC5607DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2033AFeatures[2SC5607] Adoption of MBIT processes. 2.24.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

0.2. 2sc5603.pdf Size:96K _nec

2SC560
2SC560

DATA SHEETNPN SILICON RF TRANSISTOR2SC5603NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATION

 0.3. 2sc5606.pdf Size:67K _nec

2SC560
2SC560

DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimoldORDERING INFORMATIONPart Number Quantity Supplying Form2SC5606 50 pcs (Non reel) 8 mm wide embossed taping2SC5606-T1 3

0.4. 2sc5600.pdf Size:98K _nec

2SC560
2SC560

DATA SHEETNPN SILICON RF TRANSISTOR2SC5600NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5600 50 pcs (Non reel) 8 mm wide embossed taping2

 0.5. 2sc5602.pdf Size:105K _nec

2SC560
2SC560

DATA SHEETNPN SILICON RF TRANSISTOR2SC5602NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm)ORDE

0.6. 2sc5609.pdf Size:45K _panasonic

2SC560

Transistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SA20213 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2

Datasheet: 2SC555 , 2SC555D , 2SC556 , 2SC557 , 2SC557D , 2SC558 , 2SC559 , 2SC56 , BD135 , 2SC560N , 2SC561 , 2SC562 , 2SC562Z , 2SC563 , 2SC563A , 2SC563Z , 2SC564 .

 

 
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