2SC560 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC560
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO39
2SC560 Transistor Equivalent Substitute - Cross-Reference Search
2SC560 Datasheet (PDF)
0.1. 2sc5607.pdf 
Size:30K _sanyo
Ordering number : ENN6403A2SC5607NPN Epitaxial Planar Silicon Transistor2SC5607DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2033AFeatures[2SC5607] Adoption of MBIT processes. 2.24.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
0.2. 2sc5603.pdf Size:96K _nec
DATA SHEETNPN SILICON RF TRANSISTOR2SC5603NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATION
0.3. 2sc5606.pdf Size:67K _nec
DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimoldORDERING INFORMATIONPart Number Quantity Supplying Form2SC5606 50 pcs (Non reel) 8 mm wide embossed taping2SC5606-T1 3
0.4. 2sc5600.pdf Size:98K _nec
DATA SHEETNPN SILICON RF TRANSISTOR2SC5600NPN SILICON RF TRANSISTORFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm)ORDERING INFORMATIONPart Number Quantity Supplying Form2SC5600 50 pcs (Non reel) 8 mm wide embossed taping2
0.5. 2sc5602.pdf Size:105K _nec
DATA SHEETNPN SILICON RF TRANSISTOR2SC5602NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm)ORDE
0.6. 2sc5609.pdf Size:45K _panasonic
Transistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SA20213 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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