2SC560N Specs and Replacement

Type Designator: 2SC560N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO39

 2SC560N Substitution

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2SC560N datasheet

 8.1. Size:30K  sanyo

 2sc5607.pdf pdf_icon

2SC560N

Ordering number ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2033A Features [2SC5607] Adoption of MBIT processes. 2.2 4.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.... See More ⇒

 8.2. Size:105K  nec

 2sc5602.pdf pdf_icon

2SC560N

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier S21e 2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm) ORDE... See More ⇒

 8.3. Size:98K  nec

 2sc5600.pdf pdf_icon

2SC560N

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5600 50 pcs (Non reel) 8 mm wide embossed taping 2... See More ⇒

 8.4. Size:96K  nec

 2sc5603.pdf pdf_icon

2SC560N

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION... See More ⇒

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Detailed specifications: 2SC555D, 2SC556, 2SC557, 2SC557D, 2SC558, 2SC559, 2SC56, 2SC560, TIP127, 2SC561, 2SC562, 2SC562Z, 2SC563, 2SC563A, 2SC563Z, 2SC564, 2SC565

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