2SC590N Specs and Replacement
Type Designator: 2SC590N
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO39
2SC590N Substitution
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2SC590N datasheet
2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage VCE (sat) = 0.2 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristi... See More ⇒
Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage (VCBO 1 700 V) High-speed switching (tf ... See More ⇒
Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V High-speed switching tf ... See More ⇒
Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 700 V High-speed switching tf ... See More ⇒
Detailed specifications: 2SC587A, 2SC587M, 2SC588, 2SC589, 2SC589N, 2SC58A, 2SC59, 2SC590, A42, 2SC591, 2SC591N, 2SC592, 2SC593, 2SC593M, 2SC594, 2SC594M, 2SC594O
Keywords - 2SC590N pdf specs
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