2SC591N Specs and Replacement

Type Designator: 2SC591N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO8

 2SC591N Substitution

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2SC591N datasheet

 8.1. Size:48K  rohm

 2sc5916.pdf pdf_icon

2SC591N

2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = 2A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base 4) Complements the 2SA2113 (2) Emitter Each... See More ⇒

 8.2. Size:78K  panasonic

 2sc5913.pdf pdf_icon

2SC591N

Power Transistors 2SC5913 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V Wide safe operation area Built-in dumper diode 5 5 (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 Parameter Symbol ... See More ⇒

 8.3. Size:78K  panasonic

 2sc5912.pdf pdf_icon

2SC591N

Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 500 V Wide safe operation area Built-in dumper diode 5 5 (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25 C 0.7 0.1 Parameter Symbol Rating Unit ... See More ⇒

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Detailed specifications: 2SC588, 2SC589, 2SC589N, 2SC58A, 2SC59, 2SC590, 2SC590N, 2SC591, BD333, 2SC592, 2SC593, 2SC593M, 2SC594, 2SC594M, 2SC594O, 2SC594R, 2SC594Y

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