All Transistors. 2SC591N Datasheet

 

2SC591N Datasheet and Replacement


   Type Designator: 2SC591N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO8
 

 2SC591N Substitution

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2SC591N Datasheet (PDF)

 8.1. Size:48K  rohm
 2sc5916.pdf pdf_icon

2SC591N

2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2.8TSMT31.62) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base4) Complements the 2SA2113 (2) EmitterEach

 8.2. Size:78K  panasonic
 2sc5913.pdf pdf_icon

2SC591N

Power Transistors2SC5913Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT MonitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol

 8.3. Size:78K  panasonic
 2sc5912.pdf pdf_icon

2SC591N

Power Transistors2SC5912Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol Rating Unit

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Datasheet: 2SC588 , 2SC589 , 2SC589N , 2SC58A , 2SC59 , 2SC590 , 2SC590N , 2SC591 , BD777 , 2SC592 , 2SC593 , 2SC593M , 2SC594 , 2SC594M , 2SC594O , 2SC594R , 2SC594Y .

History: 2N3265 | 2G202 | KT3102KM | 2N3280

Keywords - 2SC591N transistor datasheet

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