All Transistors. 2SC593M Datasheet

 

2SC593M Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC593M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.165 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 190 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO72

 2SC593M Transistor Equivalent Substitute - Cross-Reference Search

   

2SC593M Datasheet (PDF)

 8.1. Size:142K  toshiba
2sc5930.pdf

2SC593M
2SC593M

2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.3 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollecto

 8.2. Size:186K  fairchild semi
fjaf6810a-j6810a-2sc5936.pdf

2SC593M
2SC593M

FJAF6810AHigh Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BVCBO = 1550V High Switching Speed : tF(typ.) =0.1s For Color MonitorTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Rating UnitsVCBO Collector-Base Vo

 8.3. Size:80K  panasonic
2sc5939.pdf

2SC593M
2SC593M

Transistors2SC5939Silicon NPN epitaxial planar typeFor high-frequency amplification/oscillation/mixing Unit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High transition frequency fT Small collector output capacitance (Common base, input open cir-cuited) Cob and reverse transfer capacitance (Common base) Crb0.23+0.05 1 20.02 SSS-Mini type package, allo

 8.4. Size:71K  panasonic
2sc5935.pdf

2SC593M
2SC593M

Power Transistors2SC5935Silicon NPN triple diffusion planar typeFor power amplificationUnit: mm4.60.2For TV vertical deflection output9.90.32.90.2 Features 3.20.1 Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: 5 kV Full-pack package which can be installed to the heat sink with onescrew.

 8.5. Size:67K  panasonic
2sc5931.pdf

2SC593M
2SC593M

Power Transistors2SC5931Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 700 V High speed switching: tf

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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