2SC597 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC597
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
2SC597 Transistor Equivalent Substitute - Cross-Reference Search
2SC597 Datasheet (PDF)
2sc5976.pdf
2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 32 A
2sc5974.pdf
SMALL-SIGNAL TRANSISTOR2SC5974FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWINGDESCRIPTIONUnit : mmISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application0.1FEATURE0.45 High Emitter to Base voltage VEBO=50VHigh Reverse hFELow ON RESISTANCE. RON=11.27 1.
2sc5974a.pdf
SMALL-SIGNAL TRANSISTOR2SC5974AFOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWINGDESCRIPTIONUnit:mmISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1FEATURE0.45 High Emitter to Base voltage VEBO=40VHigh Reverse hFELow ON RESISTANCE. R ON=11.2
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2904L
