2SC601 Datasheet. Specs and Replacement
Type Designator: 2SC601
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO18
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2SC601 datasheet
0.1. Size:182K toshiba
2sc6010.pdf 
2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.24 s (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEX 600 V ... See More ⇒
0.2. Size:34K sanyo
2sc6013.pdf
Ordering number EN8556 2SC6013 NPN Epitaxial Planar Silicon Transistor 2SC6013 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. ... See More ⇒
0.3. Size:61K sanyo
2sa2169 2sc6017.pdf
Ordering number ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching 2SA2169 / 2SC6017 Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) 2SA2169 Abs... See More ⇒
0.4. Size:430K onsemi
2sa2169 2sc6017.pdf
Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R... See More ⇒
0.5. Size:333K onsemi
2sc6017-e 2sc6017.pdf
Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R... See More ⇒
0.6. Size:89K panasonic
2sc6012.pdf
Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 5 Wide safe oeration area (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25... See More ⇒
0.7. Size:208K sanken-ele
2sc6011a.pdf
2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener... See More ⇒
0.8. Size:215K inchange semiconductor
2sc6011a.pdf
isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION High Power Handling capacity High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA2151A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage... See More ⇒
0.9. Size:236K inchange semiconductor
2sc6017.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6017 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2169 APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
0.10. Size:181K inchange semiconductor
2sc6011.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA2151 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE ... See More ⇒
0.11. Size:233K inchange semiconductor
2sc6011 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A Good Linearity of hFE Complement to Type 2SA2151/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE ... See More ⇒
0.12. Size:184K inchange semiconductor
2sc6011 2sc6011a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A Good Linearity of h FE Complement to Type 2SA2151/A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general pu... See More ⇒
Detailed specifications: 2SC597N, 2SC598, 2SC598N, 2SC599, 2SC599N, 2SC60, 2SC600, 2SC600N, 13007, 2SC601N, 2SC602, 2SC602N, 2SC603, 2SC604, 2SC605, 2SC606, 2SC607
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