All Transistors. 2SC608 Datasheet

 

2SC608 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC608
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 35 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO37

 2SC608 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC608 Datasheet (PDF)

 0.1. Size:209K  toshiba
 2sc6087.pdf

2SC608 2SC608

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCEX 160 VColle

 0.2. Size:51K  sanyo
 2sc6089.pdf

2SC608 2SC608

Ordering number : ENA0995 2SC6089SANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6089Output ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol C

 0.3. Size:52K  sanyo
 2sc6082.pdf

2SC608 2SC608

Ordering number : ENA0279 2SC6082SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed Switching Ap-2SC6082plicationsApplications High-speed switching applications (switching regulator, driver circuit).Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

 0.4. Size:236K  onsemi
 2sc6082.pdf

2SC608 2SC608

Ordering number : ENA0279B2SC6082Bipolar Transistorhttp://onsemi.com( )50V, 15A, Low VCE sat NPN TO-220F-3SGApplications High-speed switching applications (switching regulator, driver circuit)Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratin

 0.5. Size:211K  inchange semiconductor
 2sc6082 .pdf

2SC608 2SC608

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6082DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCB

 0.6. Size:209K  inchange semiconductor
 2sc6082.pdf

2SC608 2SC608

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6082DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCB

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC3280 | DTC144TY3 | INA5002AC1

 

 
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