All Transistors. 2SC646 Datasheet

 

2SC646 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC646
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 1.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 2SC646 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC646 Datasheet (PDF)

 9.1. Size:626K  hitachi
2sc641.pdf

2SC646
2SC646

 9.2. Size:144K  jmnic
2sc643a.pdf

2SC646
2SC646

JMnic Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMB

 9.3. Size:144K  jmnic
2sc643.pdf

2SC646
2SC646

JMnic Product Specification Silicon NPN Power Transistors 2SC643 DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBO

 9.4. Size:115K  inchange semiconductor
2sc643a.pdf

2SC646
2SC646

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratin

 9.5. Size:177K  inchange semiconductor
2sc643.pdf

2SC646
2SC646

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC643DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: ESM2060T | 2SC976

 

 
Back to Top