2SC685 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC685
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
2SC685 Transistor Equivalent Substitute - Cross-Reference Search
2SC685 Datasheet (PDF)
9.3. Size:186K inchange semiconductor
2sc681.pdf
2sc681.pdf
isc Silicon NPN Power Transistor 2SC681DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 70V (Min)CEO(SUS)Low Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in B/W TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N4062
