2SC687 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC687
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package: TO3
2SC687 Transistor Equivalent Substitute - Cross-Reference Search
2SC687 Datasheet (PDF)
9.3. Size:186K inchange semiconductor
2sc681.pdf
2sc681.pdf
isc Silicon NPN Power Transistor 2SC681DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 70V (Min)CEO(SUS)Low Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in B/W TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
