2SC687 Specs and Replacement

Type Designator: 2SC687

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 14

Noise Figure, dB: -

Package: TO3

 2SC687 Substitution

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2SC687 datasheet

 9.1. Size:1146K  1

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2SC687

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 9.2. Size:107K  mospec

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2SC687

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 9.3. Size:186K  inchange semiconductor

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2SC687

isc Silicon NPN Power Transistor 2SC681 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V (Min) CEO(SUS) Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: 2SC683, 2SC683A, 2SC684, 2SC685, 2SC685A, 2SC685H, 2SC686, 2SC686A, BC558, 2SC688, 2SC689, 2SC689H, 2SC68M, 2SC69, 2SC690, 2SC690M, 2SC691

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