2SC688 Specs and Replacement
Type Designator: 2SC688
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO59
2SC688 Substitution
- BJT ⓘ Cross-Reference Search
2SC688 datasheet
isc Silicon NPN Power Transistor 2SC681 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V (Min) CEO(SUS) Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: 2SC683A, 2SC684, 2SC685, 2SC685A, 2SC685H, 2SC686, 2SC686A, 2SC687, TIP31, 2SC689, 2SC689H, 2SC68M, 2SC69, 2SC690, 2SC690M, 2SC691, 2SC691M
Keywords - 2SC688 pdf specs
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