2SC730 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC730
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 24 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
2SC730 Transistor Equivalent Substitute - Cross-Reference Search
2SC730 Datasheet (PDF)
2sc732.pdf
2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz) : NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC
2sc732tm.pdf
2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz) : NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
