2SC730 Specs and Replacement

Type Designator: 2SC730

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 24 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO39

 2SC730 Substitution

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2SC730 datasheet

 9.1. Size:335K  toshiba

 2sc732.pdf pdf_icon

2SC730

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒

 9.2. Size:335K  toshiba

 2sc732tm.pdf pdf_icon

2SC730

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒

Detailed specifications: 2SC723, 2SC724, 2SC725, 2SC726, 2SC727, 2SC728, 2SC729, 2SC73, TIP122, 2SC731, 2SC731Z, 2SC732, 2SC732B, 2SC732G, 2SC732TM, 2SC732TMB, 2SC732TMG

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