2SC731Z Specs and Replacement
Type Designator: 2SC731Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 350 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
2SC731Z Substitution
- BJT ⓘ Cross-Reference Search
2SC731Z datasheet
2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒
2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒
Detailed specifications: 2SC725, 2SC726, 2SC727, 2SC728, 2SC729, 2SC73, 2SC730, 2SC731, 13007, 2SC732, 2SC732B, 2SC732G, 2SC732TM, 2SC732TMB, 2SC732TMG, 2SC732V, 2SC733
Keywords - 2SC731Z pdf specs
2SC731Z cross reference
2SC731Z equivalent finder
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History: BFG97
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