2SC733O Specs and Replacement

Type Designator: 2SC733O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

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2SC733O datasheet

 9.1. Size:335K  toshiba

 2sc732.pdf pdf_icon

2SC733O

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒

 9.2. Size:335K  toshiba

 2sc732tm.pdf pdf_icon

2SC733O

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒

Detailed specifications: 2SC732G, 2SC732TM, 2SC732TMB, 2SC732TMG, 2SC732V, 2SC733, 2SC733B, 2SC733G, 2SD718, 2SC733Y, 2SC734, 2SC734G, 2SC734O, 2SC734R, 2SC734Y, 2SC735, 2SC735G

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