2SC736 Specs and Replacement

Type Designator: 2SC736

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 135 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

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2SC736 datasheet

 9.1. Size:335K  toshiba

 2sc732.pdf pdf_icon

2SC736

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒

 9.2. Size:335K  toshiba

 2sc732tm.pdf pdf_icon

2SC736

2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒

Detailed specifications: 2SC734O, 2SC734R, 2SC734Y, 2SC735, 2SC735G, 2SC735O, 2SC735R, 2SC735Y, A940, 2SC737, 2SC737M, 2SC738, 2SC739, 2SC74, 2SC740, 2SC741, 2SC742

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