2SC738 Specs and Replacement
Type Designator: 2SC738
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
2SC738 Substitution
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2SC738 datasheet
2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒
2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage VCEO = 50V Excellent hFE Linearity h (I = 0.1mA)/h (I = 2mA) = 0.95 (Typ.) FE C FE C Low Noise NF (1) = 0.5dB (Typ.) (f = 100Hz) NF (2) = 0.2dB (Typ.) (f = 1kHz) MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC ... See More ⇒
Detailed specifications: 2SC735, 2SC735G, 2SC735O, 2SC735R, 2SC735Y, 2SC736, 2SC737, 2SC737M, BC546, 2SC739, 2SC74, 2SC740, 2SC741, 2SC742, 2SC743, 2SC745, 2SC746
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