2SC75 Specs and Replacement
Type Designator: 2SC75
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 24
Package: R14
2SC75 Substitution
- BJT ⓘ Cross-Reference Search
2SC75 datasheet
2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics ... See More ⇒
2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High transition frequency, low saturation voltage, high speed switching time. / Applications Ultra high speed switchi... See More ⇒
Detailed specifications: 2SC740, 2SC741, 2SC742, 2SC743, 2SC745, 2SC746, 2SC748, 2SC749, 8550, 2SC751, 2SC752, 2SC752G, 2SC752GO, 2SC752GR, 2SC752GY, 2SC753, 2SC754
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