All Transistors. 2SC752GO Datasheet

 

2SC752GO Datasheet and Replacement


   Type Designator: 2SC752GO
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
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2SC752GO Datasheet (PDF)

 8.1. Size:68K  toshiba
 2sc752.pdf pdf_icon

2SC752GO

 8.2. Size:373K  toshiba
 2sc752tm.pdf pdf_icon

2SC752GO

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics

 8.3. Size:456K  blue-rocket-elect
 2sc752tm.pdf pdf_icon

2SC752GO

2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High transition frequency, low saturation voltage, high speed switching time. / Applications Ultra high speed switchi

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History: MMBT4122 | LMBT2222ATT3G | 2SA1051A | 2SA843 | FA4A3Q | 2SB464 | 2N1963

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