2SC752GY Specs and Replacement
Type Designator: 2SC752GY
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
2SC752GY Substitution
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2SC752GY datasheet
2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics ... See More ⇒
2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High transition frequency, low saturation voltage, high speed switching time. / Applications Ultra high speed switchi... See More ⇒
Detailed specifications: 2SC748, 2SC749, 2SC75, 2SC751, 2SC752, 2SC752G, 2SC752GO, 2SC752GR, 2SB817, 2SC753, 2SC754, 2SC755, 2SC756, 2SC756-2, 2SC756-3, 2SC756-4, 2SC756A
Keywords - 2SC752GY pdf specs
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History: 2SC752G | KT830G | 2SC758 | NSVDTC143ZET1G | BTB857D3
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