2SC756 Specs and Replacement

Type Designator: 2SC756

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 130 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO39

 2SC756 Substitution

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2SC756 datasheet

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2SC756

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2SC756

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 9.2. Size:373K  toshiba

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2SC756

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics ... See More ⇒

 9.3. Size:456K  blue-rocket-elect

 2sc752tm.pdf pdf_icon

2SC756

2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High transition frequency, low saturation voltage, high speed switching time. / Applications Ultra high speed switchi... See More ⇒

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Detailed specifications: 2SC752, 2SC752G, 2SC752GO, 2SC752GR, 2SC752GY, 2SC753, 2SC754, 2SC755, 13005, 2SC756-2, 2SC756-3, 2SC756-4, 2SC756A, 2SC757, 2SC758, 2SC759, 2SC76

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