All Transistors. 2SC756 Datasheet

 

2SC756 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC756

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 130 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO39

2SC756 Transistor Equivalent Substitute - Cross-Reference Search

 

 

2SC756 Datasheet (PDF)

1.1. 2sc756.pdf Size:217K _sony

2SC756
2SC756

5.1. 2sc752.pdf Size:68K _toshiba

2SC756
2SC756



5.2. 2sc752tm.pdf Size:373K _toshiba

2SC756
2SC756

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: V = 0.3 V (max) CE (sat) • High speed switching time: t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25°C) = = Characteristics

 5.3. 2sc752tm.pdf Size:456K _blue-rocket-elect

2SC756
2SC756

2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 高频率,低饱和压降,开关速度快。 High transition frequency, low saturation voltage, high speed switching time. 用途 / Applications 用于高速开关。 Ultra high speed switchi

Datasheet: 2SC752 , 2SC752G , 2SC752GO , 2SC752GR , 2SC752GY , 2SC753 , 2SC754 , 2SC755 , 2SC2625 , 2SC756-2 , 2SC756-3 , 2SC756-4 , 2SC756A , 2SC757 , 2SC758 , 2SC759 , 2SC76 .

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