2SC780A Datasheet and Replacement
Type Designator: 2SC780A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
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2SC780A Datasheet (PDF)
2sc789.pdf

JMnic Product SpecificationSilicon NPN Power Transistors 2SC789 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Col
2sc789.pdf

isc Silicon NPN Power Transistor 2SC789DESCRIPTIONLow Collector Saturation Voltage-: V = 1.5(V)(Max)@ I = 3ACE(sat) CDC Current Gain-: h = 40-240 @ I = 0.5AFE CComplement to Type 2SA489Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NTE2547 | UN6110S | BDY96-01 | 2N2002 | GES4890 | RN1909 | BFT33B
Keywords - 2SC780A transistor datasheet
2SC780A cross reference
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History: NTE2547 | UN6110S | BDY96-01 | 2N2002 | GES4890 | RN1909 | BFT33B



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