2SC783 Specs and Replacement
Type Designator: 2SC783
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO66
2SC783 Substitution
- BJT ⓘ Cross-Reference Search
2SC783 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2SC789 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col... See More ⇒
isc Silicon NPN Power Transistor 2SC789 DESCRIPTION Low Collector Saturation Voltage- V = 1.5(V)(Max)@ I = 3A CE(sat) C DC Current Gain- h = 40-240 @ I = 0.5A FE C Complement to Type 2SA489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Detailed specifications: 2SC779, 2SC78, 2SC780A, 2SC780AG, 2SC780G, 2SC781, 2SC782, 2SC782A, 2N5551, 2SC784, 2SC784B, 2SC784O, 2SC784R, 2SC785, 2SC786, 2SC787, 2SC788
Keywords - 2SC783 pdf specs
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