All Transistors. 2SC792 Datasheet

 

2SC792 Datasheet and Replacement


   Type Designator: 2SC792
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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2SC792 Datasheet (PDF)

 ..1. Size:142K  jmnic
 2sc792.pdf pdf_icon

2SC792

JMnic Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CON

 ..2. Size:176K  inchange semiconductor
 2sc792.pdf pdf_icon

2SC792

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC792DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLU

 9.1. Size:39K  toshiba
 2sc790.pdf pdf_icon

2SC792

 9.2. Size:45K  no
 2sc799.pdf pdf_icon

2SC792

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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | ED1602D | DRC9143X | SD2904AF | KT208I | BDY12B | SFE245

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